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參數(shù)資料
| 型號： | BLF6G10LS-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 99K |
| 代理商： | BLF6G10LS-200 |
1.
Product prole
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efciency = 27 %
N ACPR = 41 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efciency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G10LS-200
Power LDMOS transistor
Rev. 01 — 18 January 2008
Preliminary data sheet
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
η
D
ACPR
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
2-carrier W-CDMA
869 to 894
28
40
20
27
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF6G10LS-200 /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,118 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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