參數(shù)資料
型號(hào)： BLF4G22-100
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁(yè)數(shù)： 8/14頁(yè)
文件大小： 82K
代理商： BLF4G22-100
9397 750 14338
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch
corresponding to VSWR > 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 900 mA; PL = 100 W (CW).
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-case)
thermal resistance from
junction to case
Tcase =80 °C;
PL = 25 W;
2-carrier W-CDMA
-
0.76
0.85
K/W
Table 6:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 0.9 mA
65
-
V
VGS(th)
gate-source threshold voltage
VDS =10V; ID = 180 mA
2.5
3.1
3.5
V
VGSq
gate-source quiescent voltage
VDS =28V; ID = 900 mA
2.7
3.2
3.7
V
IDSS
drain leakage current
VGS =0V; VDS =28V
-
3
A
IDSX
drain cut-off current
VGS =VGS(th) +6V;
VDS =10V
27
30
-
A
IGSS
gate leakage current
VGS = 15 V; VDS = 0 V
-
300
nA
gfs
transfer conductance
VDS =10V; ID =10A
-
9.0
-
S
RDS(on)
drain-source on-state resistance VGS =VGS(th) +6V;
ID =6A
-
0.09
-
Crs
feedback capacitance
VGS =0V; VDS =28V;
f=1MHz
-
2.5
-
pF
Table 7:
Application information
Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test
model 1, 1-64 DPCH, f1 = 2112.5 MHz, f2 = 2122.5 MHz, f3 = 2157.5 MHz, f4 = 2167.5 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 25 W
12.5
13.5
-
dB
IRL
input return loss
PL(AV) = 25 W
9
15
-
dB
ηD
drain efciency
PL(AV) = 25 W
2426-
%
IMD3
third order intermodulation distortion PL(AV) = 25 W
-
37
35
dBc
ACPR
adjacent channel power ratio
PL(AV) = 25 W
-
41
39
dBc
相關(guān)PDF資料
PDF描述
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G22-100,112 制造商:NXP Semiconductors 功能描述:
BLF4G22-130 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G22-45,112 制造商:NXP Semiconductors 功能描述:
BLF4G22LS-130 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22LS-130,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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