參數(shù)資料
型號： BLF4G22-100
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 9/14頁
文件大?。?/td> 82K
代理商： BLF4G22-100
9397 750 14338
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
4 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
[1]
0.2 dB overlap is allowed for measurement reproducibility.
[2]
For 2-carrier W-CDMA at f1 = 2157 MHz, f2 = 2167.5 MHz.
(1) 2-carrier W-CDMA performance; VDS =28V, IDq = 900 mA; f1 = 2135 MHz and f2 = 2145 MHz;
PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.
Fig 1.
2-carrier W-CDMA ACPR, IMD3, power gain and drain efciency as functions of
average load power; typical values
Table 8:
Typical impedance values
VDS =28V; IDq = 900 mA; PL = 25 W (AV); Tcase =25 °C.
Frequency
(MHz)
ZS
(
)
ZL
(
)
2110
2.2 + j4.8
1.5
j2.6
2140
2.2 + j4.6
1.5
j2.4
2170
2.2 + j4.5
1.4
j2.2
Table 9:
RF gain grouping
Code [1]
Min
Max
A
12.5
13.0
B
13.0
13.5
C
13.5
14.0
D
14.0
14.5
E
14.5
-
PL(AV) (W)
050
40
20
30
10
001aac270
20
10
30
40
ηD
(%)
Gp
(dB)
0
35
45
25
15
ACPR,
IMD3
(dBc)
55
ηD
IMD3
ACPR
Gp
相關(guān)PDF資料
PDF描述
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G22-100,112 制造商:NXP Semiconductors 功能描述:
BLF4G22-130 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G22-45,112 制造商:NXP Semiconductors 功能描述:
BLF4G22LS-130 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22LS-130,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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