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參數(shù)資料
| 型號： | BSH102 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 96K |
| 代理商： | BSH102 |
1997 Dec 08
5
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH102
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
67
27
13
2290
MAX.
100
±
100
0.4
0.6
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
= 10
μ
A
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= 0; V
DS
= 24 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
= 10 V; I
D
= 0.5 A
V
GS
= 4.5 V; I
D
= 0.25 A
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 10 V; V
DD
= 15 V;
I
D
= 0.5 A; T
amb
= 25
°
C
V
DD
= 15 V; I
D
= 0.5 A;
T
amb
= 25
°
C
V
DD
= 15 V; I
D
= 0.5 A;
T
amb
= 25
°
C
30
1
V
V
nA
nA
pF
pF
pF
pC
C
iss
C
oss
C
rss
Q
G
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
Q
GS
gate-source charge
150
pC
Q
GD
gate-drain charge
780
pC
Switching times
t
d(on)
turn-on delay time
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 0.5 A; R
gen
= 6
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 0.5 A; R
gen
= 6
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 0.5 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 0.5 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 0.5 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 0.5 A; R
gen
= 6
3.5
ns
t
f
fall time
4
ns
t
on
turn-on switching time
7.5
ns
t
d(off)
turn-off delay time
8
ns
t
r
rise time
3
ns
t
off
turn-off switching time
11
ns
Source-drain diode
V
SD
source-drain diode forward
voltage
reverse recovery time
V
GD
= 0; I
S
= 0.5 A
1
V
t
rr
I
S
= 0.5 A; di/dt =
100 A/
μ
s
25
ns
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