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參數(shù)資料
| 型號： | BSH206 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode MOS transistor |
| 中文描述： | 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 144K |
| 代理商： | BSH206 |
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
BSH206
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DS
= -12 V
Very low threshold voltage
Fast switching
Logic level compatible
Subminiature surface mount
package
I
D
= -0.75 A
R
DS(ON)
≤
0.5
(V
GS
= -2.5 V)
V
GS(TO)
≥
0.4 V
GENERAL DESCRIPTION
PINNING
SOT363
P-channel, enhancement mode,
logic
level,
field-effect
transistor. This device has low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
PIN
DESCRIPTION
power
1,2,5,6 drain
3
gate
4
source
The BSH206 is supplied in the
SOT363
subminiature
mounting package.
surface
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
V
GS
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
-12
-12
±
8
-0.75
-0.47
-3
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
C
R
GS
= 20 k
T
a
= 25 C
T
a
= 100 C
T
a
= 25 C
T
a
= 25 C
T
a
= 100 C
I
DM
P
tot
Drain current (pulse peak value)
Total power dissipation
T
stg
, T
j
Storage & operating temperature
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
TYP.
300
MAX.
-
UNIT
K/W
d
g
s
1
3
5
Top view
2
4
6
August 1998
1
Rev 1.000
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