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參數(shù)資料
| 型號(hào)： | BUT12XI |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | BUT12XI |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
June 1997
6
Rev 1.000
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| BUT131A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT131H | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BUT134 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:POWER TRANSISTORS |
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