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參數(shù)資料
| 型號： | BUT12XI |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | BUT12XI |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
Fig.13. Forward bias safe operating area. T
mb
= 25C
I
II
NB:
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30
±
5 newton force on the centre of the
envelope.
Fig.14. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.15. Reverse bias safe operating area. T
j
≤
T
j max
100
10
1
0.1
0.01
1
10
100
1000
IC / A
VCE / V
DC
ICMmax
ICmax
I
II
0.01
1
100
10
1
0.1
10
h
FE
IC / A
Tj = 25 C
Tj = 125 C
1V
5V
0
200
400
600
800
1000
6
5
4
3
2
1
0
IC / A
VCE / V
8
7
Fig.16. Transient thermal impedance. Z
th
j-mb = f(t); parameter D= t
p
/T
BUX100
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
1E+01
1E+00
1E-01
1E-02
D=0
0.5
0.2
0.1
0.05
0.02
D =
tp
T
T
P
D
t
t
p
1.0
June 1997
5
Rev 1.000
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