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參數(shù)資料
| 型號(hào)： | BUT12XI |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 59K |
| 代理商： | BUT12XI |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
Fig.7. Test circuit RBSOA. V
= 150 V; -V
BB
= 5 V
L
C
= 200
μ
H; V
CL
≤
850 V; L
B
= 1
μ
H
Fig.8. Normalised power dissipation.
PD% = 100
PD/PD
25C
= f (T
mb
)
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f(I
C
); parameter I
C
/I
B
Fig.10. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
C
); parameter I
C
/I
B
Fig.11. Typical base-emitter saturation voltage.
V
BEsat
= f(I
B
); parameter I
C
Fig.12. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
B
); parameter I
C
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0.1
1
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VCEsat / V
IC / A
Tj = 25 C
Tj = 125 C
IC/IB=
12
10
8
5
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.4
0.8
1.2
IB / A
1.6
2
2.4
1.2
1.1
1
0.9
0.8
0.7
0.6
VBEsat / V
Tj = 25 C
Tj = 125 C
IC =
6A
3A
2A
0.1
1
10
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
VBEsat / V
IC / A
Tj = 125 C
Tj = 25 C
IC/IB=
8
10
12
0.1
1
10
10
1
0.1
VCEsat / V
IB / A
Tj = 25 C
Tj = 125 C
IC=2A
4A
6A
June 1997
4
Rev 1.000
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