- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366723 > CAT28F102 1 Megabit CMOS Flash Memory(1M(64K x 16位）位CMOS閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | CAT28F102 |
| 英文描述： | 1 Megabit CMOS Flash Memory(1M(64K x 16位）位CMOS閃速存儲器) |
| 中文描述： | 1兆位的CMOS快閃記憶體（100萬（64K的× 16位）位的CMOS閃速存儲器） |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | CAT28F102 |
CAT28F102
9
Doc. No. 25038-0A 2/98 F-1
WRITE OPERATIONS
The following operations are initiated by observing the
sequence specified in the Write Command Table.
Read Mode
The device can be put into a standard READ mode by
initiating a write cycle with XX00H on the data bus. The
subsequent read cycles will be performed similar to a
standard EPROM or E
2
PROM Read.
Signature Mode
An alternative method for reading device signature (see
Read Operations Signature Mode), is initiated by writing
the code XX90H into the command register while keep-
ing V
PP
high. A read cycle from address 0000H with CE
and OE low (and WE high) will output the device signa-
ture.
CATALYST Code = 0000 0000 0011 0001 (0031H)
Figure 6. A.C. Timing for Erase Operation
A Read cycle from address 0001H retrieves the binary
code for the device on outputs I/O
0
to I/O
7
.
28F102 Code = 0000 0000 0101 0001 (0051H)
Erase Mode
During the first Write cycle, the command XX20H is
written into the command register. In order to commence
the erase operation, the identical command of XX20H
has to be written again into the register. This two-step
process ensures against accidental erasure of the
memory contents. The final erase cycle will be stopped
at the rising edge of WE, at which time the Erase Verify
command (XXA0H) is sent to the command register.
During this cycle, the address to be verified is sent to the
address bus and latched when WE goes low. An inte-
grated stop timer allows for automatic timing control over
this operation, eliminating the need for a maximum
erase timing specification. Refer to AC Characteristics
(Program/Erase) for specific timing parameters.
ADDRESSES
28F102 F06
CE (E)
OE (G)
WE (W)
DATA (I/O)
VCC
VPP
tWC
tWC
tRC
tCS
tCH
tCS
tCH
tCH
tEHQZ
tDF
tGHWL
tWPH
tWHWH2
tWHGL
tWP
tDS
HIGH-Z
DATA IN
= XX20H
DATA IN
= XXA0H
VALID
DATA OUT
tDH
tDS
tWP
tDH
tDS
tWP
tDH
tOLZ
tOE
tOH
tLZ
tCE
tVPEL
VPPH
VPPL
0V
5.0V
V& STANDBY
SETUP ERASE
COMMAND
ERASE
COMMAND
ERASING
ERASE VERIFY
COMMAND
ERASE
VERIFICATION
VCC STANDBY
tAS
tAH
DATA IN
= XX20H
tWC
28F102 Fig. 6
相關PDF資料 |
PDF描述 |
|---|---|
| CAT28F512 | 512K-Bit CMOS Flash Memory(512K(64K x 8位）位CMOS閃速存儲器) |
| CAT28HT256 | 256K-Bit CMOS Parallel EEPROM(5V,快速，低功耗，256K位（32K x 8位）并行CMOS EEPROM) |
| CAT28HT64 | 64K-Bit CMOS Parallel EEPROM(5V,快速，低功耗，64K位（8K x 8位）并行CMOS EEPROM) |
| CAT28LV256PE-20T | 256K-Bit CMOS PARALLEL E2PROM |
| CAT28LV256PE-25T | 256K-Bit CMOS PARALLEL E2PROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F512G12 | 功能描述:閃存 64 X 8 512K 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-12 | 制造商:ON Semiconductor 功能描述:Flash Memory IC |
| CAT28F512G-12T | 功能描述:閃存 512K-Bit CMOS 閃存 Memory RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G90 | 功能描述:閃存 64 X 8 512K 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-90 | 制造商:ON Semiconductor 功能描述:IC FLASH 512KBIT 90NS LCC-32 |
發(fā)布緊急采購，3分鐘左右您將得到回復。