參數(shù)資料
型號: CSR2930800BA
廠商: Electronic Theatre Controls, Inc.
英文描述: FLASH MEMORY CMOS 8M (1M x 8/512K x 16) BIT
中文描述: 閃存的CMOS 800萬(100萬x 8/512K × 16)位
文件頁數(shù): 17/50頁
文件大?。?/td> 475K
代理商: CSR2930800BA
CSR2930800BA
-90
17
I
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. "CSR2930800BA Standard Command Definitions Table" in
I
DEVICE BUS OPERATION defines
the valid register command sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands
are valid only while the Sector Erase operation is in progress. Moreover both Read/Reset commands are
functionally equivalent, resetting the device to the read mode. Please note that commands are always written
at DQ
0
to DQ
7
and DQ
8
to DQ
15
bits are ignored.
1.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
5
= 1) to read/reset mode, the read/reset
operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor
read cycles retrieve array data from the memory. The devices remain enabled for reads until the command
register contents are altered.
The devices will automatically power-up in the read/reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
2.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A
9
to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read
cycle from address XX01h for
×
16(XX02h for
×
8) returns the device code (CSR2930800BA = 5Bh for
×
8 mode;
CSR2930800BA = 225Bh for
×
16 mode). (See "CSR2930800BA Sector Protection Verify Autoselect Codes
Table" and "Expanded Autoselect Code Table" in
I
DEVICE BUS OPERATION.) All manufacturer and device
codes will exhibit odd parity with DQ
7
defined as the parity bit. Sector state (protection or unprotection) will be
informed by address XX02h for
×
16 (XX04h for
×
8).
Scanning the sector addresses (A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
) while (A
6
, A
1
, A
0
) = (0, 1, 0) will produce a
logical “1” at device output DQ
0
for a protected sector. The programming verification should be perform margin
mode on the protected sector. (See “CSR2930800BA User Bus Operations Tables (BYTE
=
V
IH
and BYTE
=
V
IL
)” in
I
DEVICE BUS OPERATION.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
sequence.
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