參數(shù)資料
型號(hào): CXK77B1841AGB
廠商: Sony Corporation
英文描述: 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (128K x 36位))
中文描述: 4Mb的后寫入LVTTL高速同步SRAM(128K的x 36Bit)(4分位,寫延遲,LVTTL高速同步靜態(tài)隨機(jī)存儲(chǔ)器(128K的× 36位))
文件頁數(shù): 25/28頁
文件大?。?/td> 222K
代理商: CXK77B1841AGB
4Mb, Sync LW, LVTTL, rev 1.2
25 / 28
September 24, 1998
SONY
CXK77B3641AGB / CXK77B1841AGB
Preliminary
256K x 18 Scan Order Assignment (By Exit Sequence)
Note: NC pins at pad locations 6B (#24), 2B (#27), and 4D (#37) are connected to V
SS
internally, regardless of pin connection
externally.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
5R
6T
4P
6R
5T
7T
7P
6N
6L
7K
5L
4L
4K
4F
6H
7G
6F
7E
6D
6A
6C
5C
5A
6B
5B
M2
SA
SA
SA
SA
ZZ
DQa
DQa
DQa
DQa
SBWa
K
K
G
DQb
DQb
DQb
DQb
DQb
SA
SA
SA
SA
NC
SA
SA
NC
SA
SA
SA
SA
DQb
DQb
DQb
DQb
SBWb
NC
SS
C
C
SW
DQb
DQb
DQb
DQb
DQb
SA
SA
SA
SA
M1
3B
2B
3A
3C
2C
2A
1D
2E
2G
1H
3G
4D
4E
4G
4H
4M
2K
1L
2M
1N
2P
3T
2R
4N
2T
3R
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
相關(guān)PDF資料
PDF描述
CXK77B3641AGB 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)(HSTL)、高速同步靜態(tài)RAM (128K x 36位))
CXK77B1841GB 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位))
CXK77B3611AGB- High Speed Bi-CMOS Synchronous Static RAM
CXK77B3611AGB-5 High Speed Bi-CMOS Synchronous Static RAM
CXK77B3611AGB-6 High Speed Bi-CMOS Synchronous Static RAM
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參數(shù)描述
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CXK77B1841GB-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM
CXK77B3610AGB-5R 制造商:Sony Batteries 功能描述:77B3610AGB-5R
CXK77B3610GB- 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM
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