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參數(shù)資料
| 型號(hào)： | CXK77B1841AGB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (128K x 36位)) |
| 中文描述： | 4Mb的后寫入LVTTL高速同步SRAM（128K的x 36Bit）（4分位，寫延遲，LVTTL高速同步靜態(tài)隨機(jī)存儲(chǔ)器（128K的× 36位）） |
| 文件頁數(shù)： | 27/28頁 |
| 文件大小： | 222K |
| 代理商： | CXK77B1841AGB |
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4Mb, Sync LW, LVTTL, rev 1.2
27 / 28
September 24, 1998
SONY
CXK77B3641AGB / CXK77B1841AGB
Preliminary
Revision History
Rev. #
Rev. Date
Description of Modification
rev 0.0
02/10/98
Initial Version
rev 0.0
02/20/98
1. Changed DC Recommended Operating Conditions (p. 10).
2. Added x36 and x18 typical I
DD
values (p. 11).
3. Changed 2.5V V
DDQ
AC Test Conditions (p. 14).
4. Changed 3.3V V
DDQ
AC Test Conditions (p. 15).
5. Added x36 and x18 part numbers in boundary scan ID Registers
(p. 23).
rev 1.0
04/14/98
1. Modified AC Timing Characteristics
Deleted “-50” bin from all modes.
Renamed “-36” bin to “-33” bin in all modes.
Renamed “-40” bin to “-37” bin in all modes.
Renamed “-45” bin to “-4” bin in all modes.
R-R Mode:
Added “Clock Pulse Width timing parameters characterized but
not 100% tested at 1.3ns” note for -33 and -37 bins.
-33
T
KHKH
T
KHQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-37
T
KHKH
T
KHKL
, T
KLKH
T
KHQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-4
T
KHKH
T
KHQV
, T
KHQZ
, T
GLQV
, T
GHQZ
R-L, R-FT Modes:
Added “R-FT timing parameters guaranteed by design only”
note for all bins.
Removed T
KHQZ1
from all bins.
-33
T
KHKH
T
KHKL
, T
KLKH
T
KHQV
T
KLQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-37
T
KHKH
T
KHKL
, T
KLKH
T
KLQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-4
T
KHKH
T
KHQV
T
KLQV
, T
KHQZ
, T
GLQV
, T
GHQZ
3.6ns to 3.3ns
2.0ns to 2.3ns
4.0ns to 3.6ns
1.4ns to 1.3ns
2.1ns to 2.4ns
4.5ns to 4.0ns
2.3ns to 2.5ns
4.5ns to 5.0ns
1.3ns to 1.5ns
5.5ns to 5.0ns
2.0ns to 2.3ns
4.5ns to 5.5ns
1.4ns to 1.5ns
2.1ns to 2.4ns
5.0ns to 5.7ns
6.0ns to 5.7ns
2.3ns to 2.5ns
2. Added “3.78V V
DD
(Max) support” note to DC Recommended
Operating Conditions (p. 10).
3. Changed all maximum ambient temperature references (T
A
Max)
from 70
o
C to 85
o
C (pp. 9-15).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77B3641AGB | 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| CXK77B1841GB | 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) |
| CXK77B3611AGB- | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-5 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-6 | High Speed Bi-CMOS Synchronous Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B1841GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B1841GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B3610AGB-5R | 制造商:Sony Batteries 功能描述:77B3610AGB-5R |
| CXK77B3610GB- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3610GB-6 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
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