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參數(shù)資料
| 型號(hào)： | CY7C006A-15AI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 16K X 8 DUAL-PORT SRAM, 15 ns, PQFP64 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-64 |
| 文件頁(yè)數(shù)： | 3/20頁(yè) |
| 文件大?。?/td> | 1051K |
| 代理商： | CY7C006A-15AI |
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CY7C006A/CY7C007A
CY7C016A/CY7C017A
Document #: 38-06045 Rev. *B
Page 11 of 20
Notes:
27. R/W or CE must be HIGH during all address transitions.
28. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM.
29. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
30. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on
the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tPWE.
31. To access RAM, CE = VIL, SEM = VIH.
32. Transition is measured
±500 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
33. During this period, the I/O pins are in the output state, and input signals must not be applied.
34. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
Switching Waveforms (continued)
tAW
tWC
tPWE
tHD
tSD
tHA
CE
R/W
OE
DATAOUT
DATA IN
ADDRESS
tHZOE
tSA
tHZWE
tLZWE
Write Cycle No. 1: R/W Controlled Timing [27, 28, 29, 30]
NOTE 33
tAW
tWC
tSCE
tHD
tSD
tHA
CE
R/W
DATA IN
ADDRESS
tSA
Write Cycle No. 2: CE Controlled Timing [27, 28, 29, 34]
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| CY7C006A-15AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5V 16Kx8 COM Dual Port 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C006A-15AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5V 16Kx8 COM Dual Port 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C006A-15JC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Dual 5V 128K-Bit 16K x 8 15ns 68-Pin PLCC |
| CY7C006A-15JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM |
| CY7C006A-20AC | 功能描述:IC SRAM 16KX8 DUAL 64LQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
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