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參數(shù)資料
| 型號： | CY7C1021CV33-10ZIT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 554K |
| 代理商： | CY7C1021CV33-10ZIT |
CY7C1021CV33
1-Mbit (64K x 16) Static RAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document Number: 38-05132 Rev. *H
Revised October 11, 2007
Features
■ Temperature ranges
Commercial: 0°C to 70°C
Industrial: –40°C to 85°C
Automotive-A: –40°C to 85°C
Automotive-E: –40°C to 125°C
■ Pin and function compatible with CY7C1021BV33
■ High speed
tAA = 8 ns (Commercial & Industrial)
tAA = 12 ns (Automotive-E)
■ CMOS for optimum speed and power
■ Low active power: 325 mW (max)
■ Automatic power down when deselected
■ Independent control of upper and lower bits
■ Available in Pb-free and non Pb-free 44-pin 400 Mil SOJ, 44-pin
TSOP II and 48-Ball FBGA packages
Functional Description
The CY7C1021CV33 is a high performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is
LOW, then data from IO pins (IO1 through IO8), is written into the
location specified on the address pins (A0 through A15). If Byte
High Enable (BHE) is LOW, then data from IO pins (IO9 through
IO16) is written into the location specified on the address pins (A0
through A15).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appear
on IO1 to IO8. If Byte High Enable (BHE) is LOW, then data from
memory appears on IO9 to IO16. For more information, see the
“Truth Table” on page 9 for a complete description of Read and
Write modes.
The input and output pins (IO1 through IO16) are placed in a high
impedance state when the device is deselected (CE HIGH), the
outputs are disabled (OE HIGH), the BHE and BLE are disabled
(BHE, BLE HIGH), or during a write operation (CE LOW and WE
LOW).
For best practice recommendations, refer to the Cypress
application note AN1064, SRAM System Guidelines.
Logic Block Diagram
64K x 16
RAM Array
IO0–IO7
ROW
D
E
CODE
R
A7
A6
A5
A4
A3
A0
COLUMN DECODER
A
9
A
10
A
11
A
12
A
13
A
14
A
15
SENSE
AM
PS
DATA IN DRIVERS
OE
A2
A1
IO8–IO15
CE
WE
BLE
BHE
A
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1021CV33-10ZSXA | 功能描述:靜態(tài)隨機存取存儲器 64Kx16, 3.3V CPG R7 ASYNC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV33-10ZSXAKJ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1021CV33-10ZSXAT | 功能描述:靜態(tài)隨機存取存儲器 64Kx16, 3.3V CPG R7 ASYNC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV33-10ZXC | 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1021CV33-10ZXCT | 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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