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參數(shù)資料
| 型號(hào)： | CY7C1335 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 32K x 32 Synchronous-Pipelined Cache RAM(32K x 32 同步流水線式高速緩沖存儲(chǔ)器 RAM) |
| 中文描述： | 32K的× 32同步流水線緩存內(nèi)存（32K的× 32同步流水線式高速緩沖存儲(chǔ)器的RAM） |
| 文件頁(yè)數(shù)： | 4/15頁(yè) |
| 文件大?。?/td> | 278K |
| 代理商： | CY7C1335 |
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CY7C1335
4
Introduction
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. Max-
imum access delay from the clock rise (t
CO
) is 4.2 ns (133-MHz
device).
The CY7C1335 supports secondary cache in systems utilizing
either a linear or interleaved burst sequence. The interleaved
burst order supports Pentium and i486 processors. The linear
burst sequence is suited for processors that utilize a linear
burst sequence. The burst order is user selectable, and is de-
termined by sampling the MODE input. Accesses can be initi-
ated with either the Processor Address Strobe (ADSP) or the
Controller Address Strobe (ADSC). Address advancement
through the burst sequence is controlled by the ADV input. A
two-bit on-chip wraparound burst counter captures the first ad-
dress in a burst sequence and automatically increments the
address for the rest of the burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW
[3:0]
) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip synchro-
nous self-timed write circuitry.
Three synchronous Chip Selects (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. ADSP is ignored if CE
1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are sat-
isfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE
1
, CE
2
, CE
3
are all asserted active, and (3) the write signals
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE
1
is HIGH. The address presented to the address inputs (A
[14:0]
)
is stored into the address advancement logic and the Address
Register while being presented to the memory core. The cor-
responding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 4.2 ns (133-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always three-stated during the first cycle of the access. After
the first cycle of the access, the outputs are controlled by the
OE signal. Consecutive single read cycles are supported.
Once the SRAM is deselected at clock rise by the chip select
and either ADSP or ADSC signals, its output will three-state
immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and (2)
CE
1
, CE
2
, CE
3
are all asserted active. The address presented
to A
[14:0]
is loaded into the address register and the address
advancement logic while being delivered to the RAM core. The
write signals (GW, BWE, and BW
[3:0]
) and ADV inputs are ig-
nored during this first cycle.
ADSP-triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQ
[31:0]
inputs is written into the corre-
sponding address location in the RAM core. If GW is HIGH,
then the write operation is controlled by BWE and BW
[3:0]
sig-
nals. The CY7C1335 provides byte write capability that is de-
scribed in the Write Cycle Description Table. Asserting the
Byte Write Enable input (BWE) with the selected Byte Write
(BW
[3:0]
) input will selectively write to only the desired bytes.
Bytes not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Because the CY7C1335 is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQ
[31:0]
inputs. Doing so will three-state the output driv-
ers. As a safety precaution, DQ
[31:0]
are automatically
three-stated whenever a write cycle is detected, regardless of
the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE
1
, CE
2
, CE
3
are all asserted active,
and (4) the appropriate combination of the write inputs (GW,
BWE, and BW
[3:0]
) are asserted active to conduct a write to
the desired byte(s). ADSC-triggered write accesses require a
single clock cycle to complete. The address presented to
A
[14:0]
is loaded into the address register and the address ad-
vancement logic while being delivered to the RAM core. The
ADV input is ignored during this cycle. If a global write is con-
ducted, the data presented to the DQ
[31:0]
is written into the
corresponding address location in the RAM core. If a byte write
is conducted, only the selected bytes are written. Bytes not
selected during a byte write operation will remain unaltered. A
synchronous self-timed write mechanism has been provided
to simplify the write operations.
Because the CY7C1335 is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQ
[31:0]
inputs. Doing so will three-state the output driv-
ers. As a safety precaution, DQ
[31:0]
are automatically three-
stated whenever a write cycle is detected, regardless of the
state of OE.
Burst Sequences
The CY7C1335 provides a two-bit wraparound counter, fed by
A
[1:0]
, that implements either an interleaved or linear burst se-
quence. The interleaved burst sequence is designed specifi-
cally to support Intel Pentium applications. The linear burst
sequence is designed to support processors that follow a lin-
ear burst sequence. The burst sequence is user selectable
through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Interleaved Burst Sequence
First
Address
A
[1:0]]
00
01
10
11
Second
Address
A
[1:0]
01
00
11
10
Third
Address
A
[1:0]
10
11
00
01
Fourth
Address
A
[1:0]
11
10
01
00
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| CY7C1336 | 64K x 32 Synchronous Flow-Through 3.3V Cache RAM(3.3V 64K x 32 同步流通式高速緩沖RAM) |
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參數(shù)描述 |
|---|---|
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| CY7C1338B-100AC | 功能描述:IC SRAM 4MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
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