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參數(shù)資料
| 型號： | CY7C1335 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 32K x 32 Synchronous-Pipelined Cache RAM(32K x 32 同步流水線式高速緩沖存儲器 RAM) |
| 中文描述： | 32K的× 32同步流水線緩存內(nèi)存（32K的× 32同步流水線式高速緩沖存儲器的RAM） |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 278K |
| 代理商： | CY7C1335 |
CY7C1335
7
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
.....................................
65
°
C to +150
°
C
Ambient Temperature with
Power Applied
..................................................
55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND
.........
0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[7]
.....................................
0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[7]
..................................
0.5V to V
DDQ
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Notes:
4.
5.
X=
”
Don't Care
”
, 1=Logic HIGH, 0=Logic LOW.
The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW
. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three
–
state. OE
is a don't care for the remainder of the write cycle.
OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ=High
–
Z when OE is inactive or
when the device is deselected, and DQ=data when OE is active.
Minimum voltage equals
2.0V for pulse durations of less than 20 ns.
T
A
is the case temperature.
6.
7.
8.
Write Cycle Descriptions
[4, 5, 6]
Function
GW
BWE
BW
3
BW
2
BW
1
BW
0
Read
1
1
X
X
X
X
Read
1
0
1
1
1
1
Write Byte 0 - DQ
[7:0]
1
0
1
1
1
0
Write Byte 1 - DQ
[15:8]
1
0
1
1
0
1
Write Bytes 1, 0
1
0
1
1
0
0
Write Byte 2 - DQ
[23:16]
1
0
1
0
1
1
Write Bytes 2, 0
1
0
1
0
1
0
Write Bytes 2, 1
1
0
1
0
0
1
Write Bytes 2, 1, 0
1
0
1
0
0
0
Write Byte 3 - DQ
[31:24]
1
0
0
1
1
1
Write Bytes 3, 0
1
0
0
1
1
0
Write Bytes 3, 1
1
0
0
1
0
1
Write Bytes 3, 1, 0
1
0
0
1
0
0
Write Bytes 3, 2
1
0
0
0
1
1
Write Bytes 3, 2, 0
1
0
0
0
1
0
Write Bytes 3, 2, 1
1
0
0
0
0
1
Write All Bytes
1
0
0
0
0
0
Write All Bytes
0
X
X
X
X
X
Operating Range
Range
Ambient
Temperature
[8]
V
DD
3.3V
V
DDQ
3.3V
5%/+10%
Com
’
l
0
°
C to +70
°
C
5%/+10%
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| CY7C1338B-100AC | 功能描述:IC SRAM 4MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
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