參數資料
型號: CY7C1335
廠商: Cypress Semiconductor Corp.
英文描述: 32K x 32 Synchronous-Pipelined Cache RAM(32K x 32 同步流水線式高速緩沖存儲器 RAM)
中文描述: 32K的× 32同步流水線緩存內存(32K的× 32同步流水線式高速緩沖存儲器的RAM)
文件頁數: 9/15頁
文件大?。?/td> 278K
代理商: CY7C1335
CY7C1335
9
AC Test Loads and Waveforms
OUTPUT
R=317
R=351
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
=50
Z
0
=50
V
L
= 1.5V
3.3V
ALL INPUT PULSES
[10]
3.3V
GND
90%
10%
90%
10%
3.3ns
3.3ns
(c)
Switching Characteristics
Over the Operating Range
[11, 12, 13]
-133
-100
-75
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max.
Unit
t
CYC
Clock Cycle Time
7.5
10
13.3
ns
t
CH
Clock HIGH
1.9
3.2
5.0
ns
t
CL
Clock LOW
1.9
3.2
5.0
ns
t
AS
Address Set-Up Before CLK Rise
2.5
2.5
2.5
ns
t
AH
Address Hold After CLK Rise
0.5
0.5
0.5
ns
t
CO
Data Output Valid After CLK Rise
4.2
5.0
7.0
ns
t
DOH
Data Output Hold After CLK Rise
1.5
1.5
2.0
ns
t
ADS
ADSP, ADSC Set-Up Before CLK Rise
2.5
2.5
2.5
ns
t
ADH
ADSP, ADSC Hold After CLK Rise
0.5
0.5
0.5
ns
t
WES
BWE, GW, BW[3:0] Set-Up Before CLK Rise
2.5
2.5
2.5
ns
t
WEH
BWE, GW, BW[3:0] Hold After CLK Rise
0.5
0.5
0.5
ns
t
ADVS
ADV Set-Up Before CLK Rise
2.5
2.5
2.5
ns
t
ADVH
ADV Hold After CLK Rise
0.5
0.5
0.5
ns
t
DS
Data Input Set-Up Before CLK Rise
2.5
2.5
2.5
ns
t
DH
Data Input Hold After CLK Rise
0.5
0.5
0.5
ns
t
CES
Chip Select Set-Up
2.5
2.5
2.5
ns
t
CEH
Chip Select Hold After CLK Rise
0.5
0.5
0.5
ns
t
CHZ
Clock to High-Z
[12]
1.5
3.5
1.5
5
2
6
ns
t
CLZ
Clock to Low-Z
[12]
0
0
0
ns
t
EOHZ
OE HIGH to Output High-Z
[12, 13]
OE LOW to Output Low-Z
[12, 13]
3.5
5.5
6
ns
t
EOLZ
0
0
0
ns
t
EOV
OE LOW to Output Valid
[12]
4.2
5.0
6
ns
Notes:
10. Input waveform should have a slew rate of 1V/ns.
11. Unless otherwise noted, test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output
loading of the specified I
/I
OH
and load capacitance. Shown in (a) and (b) of AC test loads.
12. t
, t
, t
, t
, and t
EOHZ
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured
±
200 mV from
steady-state voltage.
13. At any given voltage and temperature, t
EOHZ
is less than t
EOLZ
and t
CHZ
is less than t
CLZ
.
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