參數(shù)資料
型號(hào): CY7C1350-133ACT
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁(yè)數(shù): 10/13頁(yè)
文件大小: 187K
代理商: CY7C1350-133ACT
CY7C1350
6
Write Cycle Descriptions[7, 8]
Function
WE
BWS3
BWS2
BWS1
BWS0
Read
1
XXX
X
Write
No bytes written
0111
1
Write Byte 0
(DQ
[7:0] and DP0)
0111
0
Write Byte 1
(DQ
[15:8] and DP1)
0110
1
Write Bytes 1, 0
0110
0
Write Byte 2
(DQ
[23:16] and DP2)
0101
1
Write Bytes 2, 0
0101
0
Write Bytes 2, 1
0100
1
Write Bytes 2, 1, 0
0100
0
Write Byte 3
(DQ
[31:24] and DP3)
0011
1
Write Bytes 3, 0
0011
0
Write Bytes 3, 1
0010
1
Write Bytes 3, 1, 0
0010
0
Write Bytes 3, 2
0001
1
Write Bytes 3, 2, 0
0001
0
Write Bytes 3, 2, 1
0000
1
Write All Bytes
0000
0
Notes:
7.
X=”Don't Care”, 1=Logic HIGH, 0=Logic LOW.
8.
Write is initiated by the combination of WE and BWSx.Bytes written are determined by BWS[3:0]. Bytes not selected during byte writes remain unaltered. All
I/Os are three stated during byte writes.
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