參數(shù)資料
型號(hào)： CY7C1522JV18-250BZI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 8M X 8 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁數(shù)： 3/27頁
文件大?。?/td> 658K
代理商： CY7C1522JV18-250BZI
CY7C1522JV18, CY7C1529JV18
CY7C1523JV18, CY7C1524JV18
Document #: 001-44700 Rev. *B
Page 11 of 27
Write Cycle Descriptions
The write cycle description table for CY7C1529JV18 follows. [2, 8]
BWS0
K
L
L–H
–
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
–
L–H
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
H
L–H
–
No data is written into the device during this portion of a write operation.
H
–
L–H
No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1524JV18 follows. [2, 8]
BWS0
BWS1
BWS2
BWS3
K
Comments
LLLL
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
LLLL
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
H
L–H
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L
H
–
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
H
L
H
L–H
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
–
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
L–H
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
H
–
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
L–H
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
H
L
–
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
HHHH
L–H
–
No data is written into the device during this portion of a write operation.
HHHH
–
L–H No data is written into the device during this portion of a write operation.
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CY7C1523AV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M x 18 1.8V DDR II SIO 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1523AV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M x 18 1.8V DDR II SIO 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1523JV18-300BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mbx18 72Mb 1.7-1.9V 300 MHz 2 WORD BURST RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1523KV18-250BZ 制造商:Cypress Semiconductor 功能描述:
CY7C1523KV18-250BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (4Mx18) 1.8v 250MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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