參數(shù)資料
型號: DG646BH
英文描述: GTO Thyristors - Disc / Puk Devices
中文描述: GTO晶閘管-光盤/北辰設(shè)備
文件頁數(shù): 11/19頁
文件大?。?/td> 219K
代理商: DG646BH
DG646BH25
11/19
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
FIG 17 TURN OFF ENERGY
ON STATE CURRENT
4000
3000
2000
1000
0
T
O
Conditions:
T
j
= 125
C,
C
S
= 2.0μF,
dI
GQ
/dt = 40A/μs
0.5x V
DRM
0.75x V
DRM
V
DRM
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/μs)
5000
4000
3000
2000
1000
T
O
Conditions:
T
j
= 125
C,
C
= 2.0μF,
I
T
= 2000A
0.5x V
DRM
0.75x V
DRM
V
DRM
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
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