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參數(shù)資料
| 型號： | DG646BH |
| 英文描述： | GTO Thyristors - Disc / Puk Devices |
| 中文描述： | GTO晶閘管-光盤/北辰設(shè)備 |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 219K |
| 代理商： | DG646BH |
DG646BH25
8/19
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
2000
1500
1000
500
0
T
O
Conditions:
T
j
= 125
C, I
T
= 2000A,
C
= 2.0μF, R
= 10 Ohms
dI/dt = 300A/μs,
dI
FG
/dt = 30A/μs
V
D
= 1000V
V
D
= 1500V
V
D
= 750V
0
100
200
300
Rate of rise of on-state current dI
T
/dt - (A/μs)
FIG 12 TURN ON ENERGY
Fig.12 Turn-on energy vs rate of rise of on-state current
RATE OF RISE
2000
1500
1000
500
0
T
O
Conditions:
I
T
= 2000A,
T
j
= 125
C,
C
S
= 2.0μF
R
S
= 10 Ohms
I
FGM
= 30A,
dI
FG
/dt = 30A/μs
V
D
= 1000V
V
D
= 1500V
V
D
= 750V
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
2000
1500
1000
500
0
T
O
Conditions:
T
j
= 125
C, I
FGM
= 30A,
C
S
= 2.0
μ
F,
R
S
= 10 Ohms,
dI
T
/dt = 300A/
μ
s,
dI
F
/dt = 30A/
μ
s
V
D
= 1500V
V
D
= 1000V
V
D
= 750V
Fig.10 Turn-on energy vs on-state current
Fig.11 Turn-on energy vs peak forward gate current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DG646BH25 | Gate Turn-off Thyristor |
| DG648BH | GTO Thyristor - Asymmetric - Disc / Puk Devices |
| DG648BH45 | Gate Turn-off Thyristor |
| DG758BX | GTO Thyristor - Asymmetric - Disc / Puk Devices |
| DG758BX45 | ER 26C 26#16 SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DG646BH25 | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25_05 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Turn-off Thyristor |
| DG646BH25-125A | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25-148 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DG648BH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GTO Thyristor - Asymmetric - Disc / Puk Devices |
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