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參數資料
| 型號： | DG646BH |
| 英文描述： | GTO Thyristors - Disc / Puk Devices |
| 中文描述： | GTO晶閘管-光盤/北辰設備 |
| 文件頁數： | 3/19頁 |
| 文件大?。?/td> | 219K |
| 代理商： | DG646BH |
DG646BH25
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
6600
V
RGM
= 16V, No gate/cathode resistor
μ
C
I
T
= 2000A, V
DM
= 2500V
Snubber Cap Cs = 2.0
μ
F,
di
GQ
/dt = 40A/
μ
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
2.6
V
V
DRM
= 2500V, V
RG
= 0V
-
100
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.0
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
3.0
A
mA
mJ
1188
-
V
D
= 15000V
I
T
= 2000A, dI
T
/dt = 300A/
μ
s
I
FG
= 30A, rise time < 1.0
μ
s
μ
s
1.2
-
-
3.0
μ
s
-
4000
mJ
-
17.0
μ
s
μ
s
2.0
-
μ
s
19.0
-
-
13200
μ
C
-
650
A
At 2000A peak, I
G(ON)
= 7A d.c.
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PDF描述 |
|---|---|
| DG646BH25 | Gate Turn-off Thyristor |
| DG648BH | GTO Thyristor - Asymmetric - Disc / Puk Devices |
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| DG758BX | GTO Thyristor - Asymmetric - Disc / Puk Devices |
| DG758BX45 | ER 26C 26#16 SKT PLUG |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DG646BH25 | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25_05 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Turn-off Thyristor |
| DG646BH25-125A | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25-148 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DG648BH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GTO Thyristor - Asymmetric - Disc / Puk Devices |
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