參數(shù)資料
型號: DG646BH
英文描述: GTO Thyristors - Disc / Puk Devices
中文描述: GTO晶閘管-光盤/北辰設備
文件頁數(shù): 16/19頁
文件大?。?/td> 219K
代理商: DG646BH
DG646BH25
16/19
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/μs)
8000
7000
6000
5000
4000
T
G
Conditions:
C
= 2.0μF,
I
T
= 2000A
T
j
= 25
C
T
j
= 125
C
0
0.1
500
1000
R
-
μ
s
Gate cathode resistance R
GK
- (Ohms)
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
V
D
= 1650V
V
D
= 1250V
1.0
10
100
1000
T
j
= 125
C
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
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PDF描述
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