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參數(shù)資料
| 型號： | DS1265W |
| 英文描述： | 3.3V 8Mb Nonvolatile SRAM |
| 中文描述： | 3.3V、8Mb非易失SRAM |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 155K |
| 代理商： | DS1265W |
DS1265W
7 of 8
9.
Each DS1265W has a built-in switch that disconnects the lithium source until V
CC
is first applied by
the user. The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the
time power is first applied by the user.
10.
All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 C to+ 70 C. For industrial products (IND), this range is -40 C to
+85 C.
11.
In a power-down condition, the voltage on any pin may not exceed the voltage on V
CC
.
12.
t
WR1
and t
DH1
are measured from
WE
going high.
13.
t
WR2
and t
DH2
are measured from
CE
going high.
14.
DS1265 modules are recognized by Underwriters Laboratory (U.L. ) under file E99151.
DC TEST CONDITIONS
Outputs open
Cycle = 200ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0 to 2.7V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
DS1265W - SSS - III
Operating Temperature Range
blank: 0 C to +70 C
IND: -40 C to +85 C
Access Speed
100: 100ns
150:
150ns
相關PDF資料 |
PDF描述 |
|---|---|
| DS1265W-100 | 3.3V 8Mb Nonvolatile SRAM |
| DS1265W-100-IND | 3.3V 8Mb Nonvolatile SRAM |
| DS1265W-150 | 3.3V 8Mb Nonvolatile SRAM |
| DS1265W-150-IND | 3.3V 8Mb Nonvolatile SRAM |
| DS1275N | Transceiver |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1265W-100 | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W-100+ | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W-100IND | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 8Mb Nonvolatile SRAM |
| DS1265W-100IND+ | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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