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參數(shù)資料
| 型號： | EBJ41UF8BAS0-GN-F |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1G X 64 DDR DRAM MODULE, ZMA204 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 |
| 文件頁數(shù)： | 13/21頁 |
| 文件大?。?/td> | 204K |
| 代理商： | EBJ41UF8BAS0-GN-F |
EBJ41UF8BAS0
Preliminary Data Sheet E1545E20 (Ver. 2.0)
20
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on
these components to prevent damaging them.
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,
which would be electrical defects.
When re-packing memory modules, be sure the modules are not touching each other.
Modules in contact with other modules may cause excessive mechanical stress, which may damage the
modules.
MDE0202
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
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PDF描述 |
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| EC11.0001.001 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.201 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.301 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.401 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0021.001 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBJ41UF8BCF0 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCF0-DJ-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCF0-GN-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCS0 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB DDR3 SDRAM SO-DIMM |
| EBJ41UF8BCS0-DJ-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB DDR3 SDRAM SO-DIMM |
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