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參數(shù)資料
| 型號： | EBJ41UF8BAS0-GN-F |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1G X 64 DDR DRAM MODULE, ZMA204 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 |
| 文件頁數(shù)： | 19/21頁 |
| 文件大?。?/td> | 204K |
| 代理商： | EBJ41UF8BAS0-GN-F |
EBJ41UF8BAS0
Preliminary Data Sheet E1545E20 (Ver. 2.0)
7
Byte No. Function described
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Hex
value
Comments
23
SDRAM minimum active to active /auto-
refresh time (tRC), LSB
-GN
0
00H
TBD
-DJ
1
0
1
0
1
89H
49.125ns
-AE
1
0
1
0
1
0
1
95H
50.625ns
24
SDRAM minimum refresh recovery time
delay (tRFC), LSB
0
00H
160ns
25
SDRAM minimum refresh recovery time
delay (tRFC), MSB
0
1
0
1
05H
160ns
26
SDRAM minimum internal write to read
command delay (tWTR)
0
1
0
3CH
7.5ns
27
SDRAM minimum internal read to
precharge command delay (tRTP)
0
1
0
3CH
7.5ns
28
Upper nibble for tFAW
-GN
0
00H
TBD
-DJ
0
00H
30.0ns
-AE
0
1
01H
37.5ns
29
Minimum four activate window delay time
(tFAW)
-GN
0
00H
TBD
-DJ
1
0
F0H
30.0ns
-AE
0
1
0
1
0
2CH
37.5ns
30
SDRAM output drivers supported
1
0
1
83H
DLL-off/RZQ/6, 7
31
SDRAM refresh options
1
0
1
81H
PASR/2X refresh at
+85C° to +95C°
32
Module thermal sensor
0
00H
Not Incorporated
33
SDRAM device type
0
00H
Standard
34 to 59 Reserved
0
00H
—
60
Module nominal height
0
1
0FH
29 < height
≤ 30mm
61
Module maximum thickness
0
1
0
1
11H
62
Reference raw card used
0
1
0
1
0
1
45H
Raw Card F2
63
Address mapping from edge connecter to
DRAM
0
00H
Standard
64 to
116
Module specific section
0
00H
—
117
Module ID: manufacturer’s JEDEC ID
code, LSB
0
1
0
02H
Elpida Memory
118
Module ID: manufacturer’s JEDEC ID
code, MSB
1
0
FEH
Elpida Memory
119
Module ID: manufacturing location
×
××
120
Module ID: manufacturing date
×
××
Year code (BCD)
121
Module ID: manufacturing date
×
××
Week code (BCD)
122 to
125
Module ID: module serial number
×
××
126
Cyclical redundancy code (CRC)
-GN
0
00H
TBD
-DJ
0
1
0
1
0
1
49H
-AE
0
1
0
1
0BH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EC11.0001.001 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.201 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.301 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.401 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0021.001 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBJ41UF8BCF0 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCF0-DJ-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCF0-GN-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCS0 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB DDR3 SDRAM SO-DIMM |
| EBJ41UF8BCS0-DJ-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB DDR3 SDRAM SO-DIMM |
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