參數(shù)資料
型號(hào): EDE1104ABSE-6E-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 1G bits DDR2 SDRAM
中文描述: 256M X 4 DDR DRAM, 0.45 ns, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁數(shù): 24/82頁
文件大?。?/td> 618K
代理商: EDE1104ABSE-6E-E
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
24
[Derating Values of tDS/tDH with Differential DQS (DDR2-667, 800)
DQS, /DQS differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH Unit
2.0
+100 +45 +100 +45 +100 +45
ps
1.5
+67 +21 +67 +21 +67 +21 +79 +33
ps
1.0
0
0
0
0
0
0
+12 +12 +24 +24
ps
0.9
5
14
5
14 +7
2
+19 +10 +31 +22
ps
0.8
13
31
1
19 +11
7
+23 +5
+35 +17
ps
0.7
10
42 +2
30 +14
18 +26
6
+38 +6
ps
0.6
10
59 +2
47 +14
35 +26
23 +38
11 ps
0.5
24
89
12
77 0
65 +12
53 ps
DQ
slew
rate
(V/ns)
0.4
52
140
40
128
28
116 ps
[Derating Values of tDS1/tDH1 with Single-Ended DQS (DDR2-400, 533)]
DQS, /DQS single-ended slew rate
2.0 V/ns
Δ
tDS1
1.5 V/ns
Δ
tDS1
1.0V/ns
Δ
tDS1
0.9V/ns
Δ
tDS1
0.8V/ns
Δ
tDS1
0.7 V/ns
Δ
tDS1
0.6 V/ns
Δ
tDS1
0.5 V/ns
Δ
tDS1
0.4 V/ns
Δ
tDS1
Δ
tDH1
Δ
tDH1
Δ
tDH1
Δ
tDH1
Δ
tDH1
Δ
tDH1
Δ
tDH1
Δ
tDH1
tDH1 Unit
2.0
+188 +188 +167 +146 +125 +63
ps
1.5
+146 +167 +125 +125 +83 +42 +81 +43
ps
1.0
+63 +125 +42 +83 0
0
2
+1
7
13
ps
0.9
+31 +69
11
14
13
13
18
27
29
45
ps
0.8
25
31
27
30
32
44
43
62
60
86
ps
0.7
45
53
50
67
61
85
78
109
108
152
ps
0.6
74
96
85
114
102
138
132
181
183
246 ps
0.5
128
156
145
180
175
223
226
288 ps
DQ
slew
rate
(V/ns)
0.4
210
243
240
286
291
351 ps
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE1104ABSE-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ACBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ACBG-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ACBG-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ACBG-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM