參數(shù)資料
型號: EDE2108ABSE-8G-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 2G bits DDR2 SDRAM
中文描述: 256M X 8 DDR DRAM, 0.4 ns, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁數(shù): 7/81頁
文件大小: 604K
代理商: EDE2108ABSE-8G-E
EDE2104ABSE, EDE2108ABSE
Preliminary Data Sheet E1196E10 (Ver. 1.0)
7
AC Overshoot/Undershoot Specification
Parameter
Pins
Specification
Unit
Maximum peak amplitude allowed for overshoot
Command, Address,
CKE, ODT
0.5
V
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
DDR2-800
DDR2-667
0.5
V
0.66
V-ns
0.8
V-ns
DDR2-533
Maximum undershoot area below VSS
DDR2-800
DDR2-667
1.0
V-ns
0.66
V-ns
0.8
V-ns
DDR2-533
1.0
V-ns
Maximum peak amplitude allowed for overshoot
CK, /CK
0.5
V
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
DDR2-800, 667
DDR2-533
Maximum undershoot area below VSS
DDR2-800, 667
DDR2-533
0.5
V
0.23
V-ns
0.28
V-ns
0.23
V-ns
0.28
V-ns
Maximum peak amplitude allowed for overshoot
DQ, DQS, /DQS,
0.5
V
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDDQ
DDR2-800, 667
DDR2-533
Maximum undershoot area below VSSQ
DDR2-800, 667
DDR2-533
RDQS, /RDQS, DM
0.5
V
0.23
V-ns
0.28
V-ns
0.23
V-ns
0.28
V-ns
Maximum amplitude
Overshoot area
Undershoot area
Volts (V)
Time (ns)
VDD, VDDQ
VSS, VSSQ
Overshoot/Undershoot Definition
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