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參數(shù)資料
| 型號： | FM2G50US60 |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|半橋| 600V的五（巴西）國際消費電子展| 50A條一（c） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 705K |
| 代理商： | FM2G50US60 |
2000 Fairchild Semiconductor International
September 2000
FM2G50US60 Rev. A
IGBT
F
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
Description
FM2G50US60
600
±
20
50
100
50
100
10
250
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°
C
°
C
V
N.m
N.m
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ T
C
= 25
°
C
@ T
C
= 100
°
C
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ AC 1minute
FM2G50US60
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control, UPS
and general inverters where short-circuit ruggedness is
required.
Features
Short Circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 50A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Application
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
Internal Circuit Diagram
C1
E2
G1
E1
G2
E2
E1/C2
Package Code : 7PM-AA
相關PDF資料 |
PDF描述 |
|---|---|
| FM2G75US60 | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) |
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| FM304 | SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FM2G75US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FM2-LAIRD | 制造商:Laird Technologies Inc 功能描述:ANTENNA HARDWARE/ACCESSORY |
| FM2SP | 功能描述:ACCY MOUNTING KIT HD 2.5 MAST RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標準包裝:1 系列:* |
| FM2STST05M | 制造商:MISC WIRE AND CABLE 功能描述: |
| FM3 | 制造商:Laird Technologies Inc 功能描述:MOUNT,HDL,3IN MAST |
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