參數(shù)資料
型號: FM2G50US60
英文描述: TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
中文描述: 晶體管| IGBT功率模塊|半橋| 600V的五(巴西)國際消費電子展| 50A條一(c)
文件頁數(shù): 6/9頁
文件大?。?/td> 705K
代理商: FM2G50US60
2000 Fairchild Semiconductor International
FM2G50US60 Rev. A
F
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
T
C
= 25
IGBT :
DIODE :
T
/
Rectangular Pulse Duration [sec]
0
100
200
300
400
500
600
700
0.1
1
10
100
300
Single Nonrepetitive
Pulse T
J
125
V
GE
= 15V
R
G
= 5.9
C
Collector-Emitter Voltage, V
CE
[V]
20
40
60
80
100
100
1000
10000
20000
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 5.9
T
C
= 25
T
C
= 125
S
Collector Current, I
C
[A]
0
40
80
120
160
0
3
6
9
12
15
200 V
V
CC
= 100 V
300 V
Common Emitter
R
L
= 5.9
T
C
= 25
G
Gate Charge, Qg [ nC ]
0.3
1
10
100
1000
0.1
1
10
100
300
Single Nonrepetitive
Pulse T
= 25
Curves must be derated
linerarly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
Collector-Emitter Voltage, V
CE
[V]
1
10
100
1000
1
10
100
300
Safe Operating Area
V
GE
= 20V, T
C
= 100
o
C
C
Collector-Emitter Voltage, V
CE
[V]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Characteristics
Fig 18. Transient Thermal Impedance
相關PDF資料
PDF描述
FM2G75US60 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C)
FM301 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM302 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM303 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM304 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
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