參數(shù)資料
型號(hào): FM2G50US60
英文描述: TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
中文描述: 晶體管| IGBT功率模塊|半橋| 600V的五(巴西)國(guó)際消費(fèi)電子展| 50A條一(c)
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 705K
代理商: FM2G50US60
2000 Fairchild Semiconductor International
FM2G50US60 Rev. A
F
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
20
40
60
80
100
120
140
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
20
40
60
80
100
120
140
Common Emitter
V
GE
= 15V
T
C
= 25
━━
T
C
= 125
------
C
C
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
0
1
2
3
4
5
50A
100A
I
C
= 30A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
100A
50A
I
C
= 30A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
100A
50A
I
C
= 30A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
10
20
30
40
50
60
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 70W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
相關(guān)PDF資料
PDF描述
FM2G75US60 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C)
FM301 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM302 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM303 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM304 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
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