參數(shù)資料
型號(hào): FM2G50US60
英文描述: TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
中文描述: 晶體管| IGBT功率模塊|半橋| 600V的五(巴西)國際消費(fèi)電子展| 50A條一(c)
文件頁數(shù): 2/9頁
文件大?。?/td> 705K
代理商: FM2G50US60
2000 Fairchild Semiconductor International
FM2G50US60 Rev. A
F
Electrical Characteristics of IGBT
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coeff. of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
±
100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 0V, I
C
= 50mA
5.0
6.0
8.5
V
V
CE(sat)
I
C
= 50A
,
V
GE
= 15V
--
2.2
2.8
V
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
3460
480
140
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9
, V
GE
= 15V
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
32
67
66
118
1.8
1.0
2.8
33
68
68
261
2.41
2.31
4.72
--
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
100
200
--
--
3.8
--
--
110
400
--
--
6.65
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9
, V
GE
= 15V
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 300 V, I
C
= 50A,
V
GE
= 15V
--
--
--
145
28
65
210
40
95
nC
nC
nC
相關(guān)PDF資料
PDF描述
FM2G75US60 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C)
FM301 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM302 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM303 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
FM304 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FM2G75US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FM2-LAIRD 制造商:Laird Technologies Inc 功能描述:ANTENNA HARDWARE/ACCESSORY
FM2SP 功能描述:ACCY MOUNTING KIT HD 2.5 MAST RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
FM2STST05M 制造商:MISC WIRE AND CABLE 功能描述:
FM3 制造商:Laird Technologies Inc 功能描述:MOUNT,HDL,3IN MAST