型號: | FQB22P10 |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | JFETs |
英文描述: | 100V P-Channel MOSFET |
中文描述: | 22 A, 100 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
封裝: | ROHS COMPLIANT, D2PAK-3 |
文件頁數(shù): | 7/9頁 |
文件大小: | 636K |
代理商: | FQB22P10 |
相關(guān)PDF資料 |
PDF描述 |
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FQB27P06 | Inductor; Inductor Type:Standard; Inductance:146uH; Series:CMS; DC Resistance Max:0.017ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:3.4A; Leaded Process Compatible:Yes; Leakage Inductance:1.3uH RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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FQB22P10_13 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel QFET MOSFET |
FQB22P10TM | 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FQB22P10TM_F085 | 功能描述:MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FQB24N08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel MOSFET |
FQB24N08TM | 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |