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參數(shù)資料
| 型號(hào)： | FQB60N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized Power MOSFET |
| 中文描述： | 51 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 238K |
| 代理商： | FQB60N03L |
2002 Fairchild Semiconductor Corporation
October 2002
FQB60N03L Rev. B
F
FQB60N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology
and features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.010
(Typ), V
GS
= 10V
r
DS(ON)
= 0.017
(Typ), V
GS
= 5V
Q
g
(Typ) = 13nC, V
GS
= 5V
Q
gd
(Typ) = 4.5nC
C
ISS
(Typ) = 1650pF
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
16
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
51
27
7
A
A
A
A
W
Figure 4
62
0.5
-55 to 150
P
D
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
2
o
C/W
o
C/W
o
C/W
62
43
Device Marking
FQB60N03L
Device
FQB60N03L
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
S
G
D
TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
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