參數(shù)資料
型號(hào)： FS50R12KT3
廠商： INFINEON TECHNOLOGIES AG
元件分類(lèi)： IGBT 晶體管
英文描述： echnische Information / technical information
中文描述： 75 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-28
文件頁(yè)數(shù)： 8/8頁(yè)
文件大小： 276K
代理商： FS50R12KT3
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.
相關(guān)PDF資料
PDF描述
FS50SM-06 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
FS50SM-06 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
FS50SM-2 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
FS50SM-2 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
FS50SM-3 HIGH-SPEED SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FS50R12KT3_04 制造商:EUPEC 制造商全稱:EUPEC 功能描述:EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS50R12KT4_B11 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS50R12KT4_B15 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS50R12W2T4 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS50R12W2T4_B11 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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