參數(shù)資料
型號： FSB50550T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 運(yùn)動控制電子
英文描述： Smart Power Module (SPM)
中文描述： AC MOTOR CONTROLLER, 3.5 A, DMA23
文件頁數(shù)： 1/8頁
文件大?。?/td> 166K
代理商： FSB50550T
2006 Fairchild Semiconductor Corporation
FSB50550T Rev. A
1
www.fairchildsemi.com
F
September 2006
FSB50550T
Smart Power Module (SPM)
Features
500V 3.5A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
3 divided negative dc-link terminals for inverter current sens-
ing applications
HVIC for gate driving and undervoltage protection
3/5V CMOS/TTL compatible, active-high interface
Optimized for low electromagnetic interference
Isolation voltage rating of 1500Vrms for 1min.
Extended VB pin for PCB isolation
General Description
FSB50550T is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50550T
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50550T is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Rating
Units
V
PN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
500
V
I
D25
I
D80
I
DP
P
D
V
CC
V
BS
V
IN
T
J
Each FRFET Drain Current, Continuous
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C, PW < 100
μ
s
T
C
= 80°C, Each FRFET
Applied between V
CC
and COM
Applied between V
B(U)
-U, V
B(V)
-V, V
B(W)
-W
Applied between IN and COM
1.8
A
Each FRFET Drain Current, Continuous
1.2
A
Each FRFET Drain Current, Peak
3.5
A
Maximum Power Dissipation
4.5
W
Control Supply Voltage
20
V
High-side Bias Voltage
20
V
Input Signal Voltage
-0.3 ~ VCC+0.3
V
Operating Junction Temperature
-20 ~ 150
°C
T
STG
Storage Temperature
-50 ~ 150
°C
R
θ
JC
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
8.6
°C/W
V
ISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
V
rms
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSB50550T_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢)
FSB50550TB 功能描述:IGBT 模塊 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSB50550TB2 功能描述:IGBT 模塊 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSB50550U 功能描述:IGBT 模塊 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSB50550US 功能描述:IGBT 模塊 500V, 1.2A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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