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參數(shù)資料
| 型號： | FSB50550T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | Smart Power Module (SPM) |
| 中文描述： | AC MOTOR CONTROLLER, 3.5 A, DMA23 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 166K |
| 代理商： | FSB50550T |
Rev. I20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx
ActiveArray
Bottomless
Build it Now
CoolFET
CROSSVOLT
DOME
EcoSPARK
E
2
CMOS
EnSigna
FACT
FAST
FASTr
FPS
FRFET
MSX
MSXPro
RapidConnect
μ
SerDes
ScalarPump
The Power Franchise
Programmable Active Droop
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
FACT Quiet Series
GlobalOptoisolator
GTO
HiSeC
I
2
C
i-Lo
ImpliedDisconnect
IntelliMAX
ISOPLANAR
LittleFET
MICROCOUPLER
MicroFET
MicroPak
MICROWIRE
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerEdge
PowerSaver
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
SILENT SWITCHER
SMART START
SPM
Stealth
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TCM
TinyBoost
TinyBuck
TinyPWM
TinyPower
TinyLogic
TINYOPTO
TruTranslation
UHC
UniFET
UltraFET
VCX
Wire
Across the board. Around the world.
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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PDF描述 |
|---|---|
| FSB560 | NPN Low Saturation Transistor |
| FSB560A | NPN Low Saturation Transistor |
| FSB619 | NPN Low Saturation Transistor |
| FSB649 | NPN Low Saturation Transistor |
| FSB660A | PNP Low Saturation Transistor(集電極電流達2A的PNP低飽和電壓晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSB50550T_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢) |
| FSB50550TB | 功能描述:IGBT 模塊 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550TB2 | 功能描述:IGBT 模塊 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550U | 功能描述:IGBT 模塊 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550US | 功能描述:IGBT 模塊 500V, 1.2A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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