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參數(shù)資料
| 型號(hào)： | FSU01LG |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | General Purpose GaAs FET |
| 中文描述： | 通用砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | FSU01LG |
2
FSU01LG
General Purpose GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
200
100
400
300
0
50
100
150
200
Case Temperature (
°
C)
T
50
60
40
10
20
30
1
2
3
4
5
Drain-Source Voltage (V)
D
VGS =0V
-0.2V
-0.4V
-0.6V
-0.8V
-1.0V
-1.2V
NOISE FIGURE vs. DRAIN-SOURCE CURRENT
ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT
IDS
=
10mA
f = 2.0 GHz
10
20
30
40
Drain-Source Current (mA)
19.5
19.0
18.5
18.0
17.5
A
5V
4V
2V
IDS
=
10mA
f = 2.0 GHz
10
20
30
40
Drain-Source Current (mA)
0.9
0.8
0.7
0.6
0.5
N
VDS = 6V
VDS = 6V
5V
4V
2, 3V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSU02LG | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Small Signal GaAs FETs, Medium Power, 17dB, 2GHz, 80mA, Bulk |
| FSU05A60 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:FRD - Low Forward Voltage Drop |
| FSU05B60 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION |
| FSU1004 | 制造商:Ssac 功能描述: |
| FSU10A30 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:For Power Factor Improvement High Frequency Rectification |
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