參數(shù)資料
型號(hào): GS832236E-225IV
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 7 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù): 35/42頁
文件大?。?/td> 1537K
代理商: GS832236E-225IV
GS832218/36/72(B/E/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06a 12/2007
40/42
2003, GSI Technology
1M x 36
GS832236GB-225V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
225/7
C
1M x 36
GS832236GB-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
200/7.5
C
1M x 36
GS832236GB-166V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
166/8
C
1M x 36
GS832236GB-150V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
150/8.5
C
1M x 36
GS832236GB-133V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
133/8.5
C
1M x 36
GS832236GE-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
C
1M x 36
GS832236GE-225V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
225/7
C
1M x 36
GS832236GE-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/7.5
C
1M x 36
GS832236GE-166V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
166/8
C
1M x 36
GS832236GE-150V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
C
1M x 36
GS832236GE-133V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
C
512K x 72
GS832272GC-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
250/6.5
C
512K x 72
GS832272GC-225V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
225/7
C
512K x 72
GS832272GC-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
200/7.5
C
512K x 72
GS832272GC-166V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
166/8
C
512K x 72
GS832272GC-150V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
150/8.5
C
512K x 72
GS832272GC-133V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
133/8.5
C
2M x 18
GS832218GB-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
250/6.5
I
2M x 18
GS832218GB-225IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
225/7
I
2M x 18
GS832218GB-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
200/7.5
I
2M x 18
GS832218GB-166IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
166/8
I
2M x 18
GS832218GB-150IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
150/8.5
I
2M x 18
GS832218GB-133IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
133/8.5
I
2M x 18
GS832218GE-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
I
2M x 18
GS832218GE-225IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
225/7
I
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number1
Type
Voltage
Option
Package
Speed2
(MHz/ns)
TA3
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832218B-150IVT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
相關(guān)PDF資料
PDF描述
GS8322Z18E-225VT 2M X 18 ZBT SRAM, 7 ns, PBGA165
GS8322ZV72GC-150IT 512K X 72 ZBT SRAM, 8.5 ns, PBGA209
GS8322ZV36GB-200T 1M X 36 ZBT SRAM, 7.5 ns, PBGA119
GS8322ZV36GE-225IT 1M X 36 ZBT SRAM, 7 ns, PBGA165
GS8324Z18B-166IT 2M X 18 ZBT SRAM, 8.5 ns, PBGA119
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