- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299161 > GS832236E-225IV (GSI TECHNOLOGY) 1M X 36 CACHE SRAM, 7 ns, PBGA165 PDF資料下載
參數(shù)資料
| 型號： | GS832236E-225IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 36 CACHE SRAM, 7 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 9/42頁 |
| 文件大小： | 1537K |
| 代理商： | GS832236E-225IV |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
GS832218/36/72(B/E/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06a 12/2007
17/42
2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage on VDDQ Pins
–0.5 to VDD
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
VDD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
1.8 V VDDQ I/O Supply Voltage
VDDQ1
1.7
1.8
VDD
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
VDD
V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8322Z18E-225VT | 2M X 18 ZBT SRAM, 7 ns, PBGA165 |
| GS8322ZV72GC-150IT | 512K X 72 ZBT SRAM, 8.5 ns, PBGA209 |
| GS8322ZV36GB-200T | 1M X 36 ZBT SRAM, 7.5 ns, PBGA119 |
| GS8322ZV36GE-225IT | 1M X 36 ZBT SRAM, 7 ns, PBGA165 |
| GS8324Z18B-166IT | 2M X 18 ZBT SRAM, 8.5 ns, PBGA119 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS832236GB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
| GS832236GB-200E | 制造商:GSI Technology 功能描述:GS832236GB-200E - Trays |
| GS832236GB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
| GS832236GB-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
| GS832236GB-200V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。