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參數(shù)資料
| 型號： | GS840E18GB-100T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 CACHE SRAM, 12 ns, PBGA119 |
| 封裝： | BGA-119 |
| 文件頁數(shù)： | 11/31頁 |
| 文件大?。?/td> | 629K |
| 代理商： | GS840E18GB-100T |
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Rev: 2.05 6/2000
19/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
.
GS840E18/32/36T/B-180/166/150/100
AC Electrical Characteristics
Notes:
1. These parameters are sampled and are not 100% tested
2. ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-180
-166
-150
-100
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
5.5
---
6.0
---
6.7
---
10
---
ns
Clock to Output Valid
tKQ
---
3.2
---
3.5
---
3.8
---
4.5
ns
Clock to Output Invalid
tKQX
1.5
---
1.5
---
1.5
---
1.5
---
ns
Clock to Output in Low-Z
tLZ1
1.5
---
1.5
---
1.5
---
1.5
---
ns
Flow-
Thru
Clock Cycle Time
tKC
10.0
---
10.0
---
10.0
---
15.0
---
ns
Clock to Output Valid
tKQ
---
8.0
---
8.5
---
10.0
---
12.0
ns
Clock to Output Invalid
tKQX
3.0
---
3.0
---
3.0
---
3.0
---
ns
Clock to Output in Low-Z
tLZ1
3.0
---
3.0
---
3.0
---
3.0
---
ns
Clock HIGH Time
tKH
1.3
---
1.3
---
1.5
---
2
---
ns
Clock LOW Time
tKL
1.5
---
1.5
---
1.7
---
2.2
---
ns
Clock to Output in High-Z
tHZ1
1.5
3.2
1.5
3.5
1.5
3.8
1.5
5
ns
G to Output Valid
tOE
---
3.2
---
3.5
---
3.8
---
5
ns
G to output in Low-Z
tOLZ1
0
---
0
---
0
---
0
---
ns
G to output in High-Z
tOHZ1
---
3.2
---
3.5
---
3.8
---
5
ns
Setup time
tS
1.5
---
1.5
---
1.5
---
2.0
---
ns
Hold time
tH
0.5
---
0.5
---
0.5
---
0.5
---
ns
ZZ setup time
tZZS2
5
---
5
---
5
---
5
---
ns
ZZ hold time
tZZH2
1
---
1
---
1
---
1
---
ns
ZZ recovery
tZZR
20
---
20
---
20
---
20
---
ns
相關(guān)PDF資料 |
PDF描述 |
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| GS840E18GB-180 | 256K X 18 CACHE SRAM, 8 ns, PBGA119 |
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| GS8641Z18GF-167T | 4M X 18 ZBT SRAM, 8 ns, PBGA165 |
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| GS8642ZV36GB-167IT | 2M X 36 ZBT SRAM, 8 ns, PBGA119 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS840E18T | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
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