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參數(shù)資料
| 型號： | GS840E18GB-100T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 CACHE SRAM, 12 ns, PBGA119 |
| 封裝： | BGA-119 |
| 文件頁數(shù)： | 27/31頁 |
| 文件大?。?/td> | 629K |
| 代理商： | GS840E18GB-100T |
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Rev: 2.05 6/2000
5/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
.
GS840E18/32/36T/B-180/166/150/100
TQFP Pin Description
Pin Location
Symbol
Type
Description
37, 36
A0, A1
I
Address field LSB’s and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81,44, 45, 46,
47, 48, 49, 50
A2-16
I
Address Inputs
80
A17
I
Address Inputs (x18 versions)
52, 53, 56, 57, 58, 59, 62, 63
68, 69, 72, 73, 74, 75, 78, 79
2, 3, 6, 7, 8, 9, 12, 13
18, 19, 22, 23, 24, 25, 28, 29
DQA1-DQA8
DQB1-DQB8
DQC1-DQC8
DQD1-DQD8
I/O
Data Input and Output pins. (x32, x36 Version)
51, 80, 1, 30
DQA9, DQB9,
DQC9, DQD9
I/O
Data Input and Output pins. (x36 Version)
51, 80, 1, 30
NC
No Connect (x32 Version)
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
DQA1-DQA9
DQB1-DQB9
I/O
Data Input and Output pins. (x18 Version)
51, 52, 53, 56, 57
75, 78, 79
1, 2, 3, 6, 7
25, 28, 29, 30
NC
-
No Connect (x18 Version)
87
BW
I
Byte Write. Writes all enabled bytes. Active Low.
93, 94
BA, BB
I
Byte Write Enable for DQA, DQB Data I/O’s. Active Low.
95, 96
BC, BD
I
Byte Write Enable for DQC, DQD Data I/O’s. Active Low.
(x32, x36 Version)
95, 96
NC
-
No Connect (x18 Version)
89
CK
I
Clock Input Signal. Active High.
88
GW
I
Global Write Enable. Writes all bytes. Active Low.
98, 92
E1, E3
I
Chip Enable. Active Low.
97
E2
I
Chip Enable. Active High.
86
G
I
Output Enable. Active Low.
83
ADV
I
Burst address counter advance enable. Active Low.
84, 85
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller). Active Low.
64
ZZ
I
Sleep Mode control. Active High.
14
FT
I
Flow Through or Pipeline mode. Active Low.
31
LBO
I
Linear Burst Order mode. Active Low.
15, 41, 65, 91
VDD
I
Core power supply.
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
VSS
I
I/O and Core Ground.
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
I
Output driver power supply.
16, 38, 39, 42, 43, 66
NC
-
No Connect.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS840E18T | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18T-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
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