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參數(shù)資料
| 型號(hào)： | GS84118T-166 |
| 英文描述： | x18 Synchronous SRAM |
| 中文描述： | x18同步SRAM |
| 文件頁(yè)數(shù)： | 10/30頁(yè) |
| 文件大?。?/td> | 584K |
| 代理商： | GS84118T-166 |
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Rev: 1.05 7/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/30
1999, Giga Semiconductor, Inc.
GS84118T/B-166/150/130/100
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissapation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
2.
3.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
Rating
Layer Board
Symbol
TQFP max
PBGA max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
32
28
°
C/W
1,2
Junction to Ambient (at 200 lfm)
four
R
Θ
JA
20
18
°
C/W
1,2
Junction to Case (TOP)
—
R
Θ
JC
7
4
°
C/W
3
AC Test Conditions
(V
DD
= 3.135 V–3.6 V, T
A
= 0–70
°
C)
Parameter
Notes:
1.
Include scope and jig capacitance.
2.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
Device is deselected as defined by the Truth Table.
3.
4.
Conditions
Input high level
V
IH
= 2.3 V
Input low level
V
IL
= 0.2 V
Input slew rate
TR = 1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
DQ
VT = 1.25 V
5
0W
30pF
1
DQ
2.5 V
F
IG
. 1
Output load 1
Output load 2
F
IG
. 2
225W
225W
5pF
1
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