- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371759 > H5N2522FN-E-T2 (Renesas Technology Corp.) Silicon N Channel MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | H5N2522FN-E-T2 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 113K |
| 代理商： | H5N2522FN-E-T2 |
H5N2522FN
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Min
250
—
—
1.5
—
Typ
—
—
—
—
0.13
Max
—
10
±
0.1
4.0
0.17
Unit
V
μ
A
μ
A
V
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 250 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
—
—
—
—
—
—
—
—
1300
185
62
24
57
190
69
0.89
93
—
—
—
—
—
—
—
1.35
—
pF
pF
pF
ns
ns
ns
ns
V
ns
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 20
Rg = 10
I
F
= 12 A, V
GS
= 0
I
F
= 12 A, V
GS
= 0
di
F
/dt = 100 A/
μ
s
Notes: 4. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H5N2901FN | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2901FN-E | Silicon N Channel MOS FET High Speed Power Switching |
| H5N3003 | Silicon N Channel MOS FET High Speed Power Switching |
| H5N3003P | Silicon N Channel MOS FET High Speed Power Switching |
| H5N3004P | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2522FP-E0-E#T2 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube |
| H5N2522LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LS_10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LS7 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LSTL-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 20A LDPAK |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。