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參數資料
| 型號： | H5N2522FN-E-T2 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | H5N2522FN-E-T2 |
H5N2522FN
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 4 of 6
0.5
0.4
0.3
0.2
0.1
25
0
25
50
75
100 125
150
0
Case Temperature Tc (
°
C)
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
V
GS
= 10 V
Pulse Test
0.1
0.3
1.0
3
10
30
100
1000
200
500
100
20
50
10
2
5
1
0
40
20
60
80
100
3000
1000
10000
100
300
10000
1000
10
100
0.1
0.3
1
3
10
30
100
30
10
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
D
(A)
S
Switching Characteristics
di / dt = 100 A /
μ
s
V
GS
= 0, Ta = 25
°
C
td(on)
td(off)
td(off)
tr
tr
tf
tf
1 A
I
D
= 3 A
V
GS
= 10 V, V
DD
= 125 V
PW = 5
μ
s, duty
≤
1 %
R
G
= 10
1.5 A
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
0
0.4
0.8
1.2
1.6
2.0
50
20
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
R
D
5
4
3
2
1
25
0
50
100
150
25
125
75
0
Case Temperature Tc (
°
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
G
G
V
DS
= 10 V
1 mA
10
30
40
I
D
= 10 mA
V
GS
= 0 V,
5 V
Pulse Test
5 V
10 V
0.1 mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| H5N2522FP-E0-E#T2 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube |
| H5N2522LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LS_10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LS7 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LSTL-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 20A LDPAK |
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