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參數(shù)資料
| 型號(hào)： | H5N2522FN-E-T2 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | H5N2522FN-E-T2 |
H5N2522FN
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 3 of 6
Main Characteristics
50
40
30
20
10
0
50
100
150
200
50
40
30
20
10
0
4
8
12
16
20
50
40
30
20
10
0
2
4
6
8
10
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
3
2
1
0
4
8
12
16
20
0.1
3
10
0.3
1
30
100
0.2
0.1
0.05
1
0.5
0.02
0.01
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
Drain Current I
D
(A)
D
D
)
Static Drain to Source on State Resistance
vs. Drain Current
5
4
V
GS
= 10 V
Pulse Test
300
100
30
10
3
1
0.1 0.3
1
3
10
30
300 1000
0.3
0.01
0.1
0.03
1000
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
100
V
GS
= 4 V
Pulse Test
10 V
15 V
20 V
8 V
4.5 V
5.5 V
5 V
6 V
Ta = 25
°
C
1ms
10
μ
s
Operation in this
area is limited by
R
DS(on)
PW = 10 ms
(1shot)
DC Operation
(Tc = 25
°
C)
100
μ
s
Tc = 75
°
C
25
°
C
25
°
C
V
DS
= 10 V
Pulse Test
I
D
= 12 A
6 A
3 A
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2522FP-E0-E#T2 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube |
| H5N2522LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LS_10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LS7 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2522LSTL-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 20A LDPAK |
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