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參數(shù)資料
| 型號(hào)： | H5N6001P |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 468K |
| 代理商： | H5N6001P |
H5N6001P
Rev.0, May 2001, page 2 of 10
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D
(pulse)*
1
I
DR
600
V
Gate to source voltage
±
30
V
Drain current
20
A
Drain peak current
80
A
Body-drain diode reverse drain
current
20
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)*
1
80
A
Avalanche current
I
AP
*
3
Pch*
2
6.5
A
Channel dissipation
150
W
Channel to case thermal inpedance
θ
ch-c
0.833
°
C/W
°
C
Channel temperature
Tch
150
Storage temperature
Notes: 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Tch
≤
150
°
C
Tstg
–55 to +150
°
C
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