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參數(shù)資料
| 型號(hào)： | H5N6001P |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 468K |
| 代理商： | H5N6001P |
H5N6001P
Rev.0, May 2001, page 5 of 10
8
6
4
2
0
4
8
12
16
20
1
5
20
100
2
10
50
2
1
0.5
0.2
0.1
1
0.8
0.6
0.4
0.2
–25
0
Case Temparature Tc (
°
C)
25
50
75
100 125 150
0
0.1 0.2
2
20
0.5
5
50 100
100
20
10
50
5
2
1
0.5
0.2
0.1
1
10
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
25
°
C
Tc =
–
25
°
C
75
°
C
V = 10 V
Pulse Test
V = 10 V
Pulse Test
I = 20 A
10 A
5 A
Pulse Test
10 A
5 A
I = 20 A
D
Gate to Source Voltage V (V)
V
D
D
Drain Current I (A)
D
R
D
Pulse Test
V
GS
= 10 V, 15 V
(
)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
S
(
)
R
D
|
F
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| H5N6001P_05 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N6001P-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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