參數(shù)資料
型號(hào): H5N6001P
文件頁數(shù): 3/10頁
文件大?。?/td> 468K
代理商: H5N6001P
H5N6001P
Rev.0, May 2001, page 3 of 10
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
V
I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
1
±
0.1
μ
A
μ
A
V
DS
= 600 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
DS
= 10 V*
4
I
D
= 10 A, V
GS
= 10 V*
4
Gate to source leak current
Gate to source cutoff voltage
3.0
4.0
V
Forward transfer admittance
12
20
S
Static drain to source on state
resistance
0.30
0.38
Input capacitance
Ciss
4640
pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
V
DD
300 V, I
D
= 10 A
V
GS
= 10 V
R
L
= 30
Rg = 10
Output capacitance
Coss
340
pF
Reverse transfer capacitance
Crss
70
pF
Turn-on delay time
td(on)
60
ns
Rise time
tr
100
ns
Turn-off delay time
td(off)
220
ns
Fall time
tf
90
ns
Total gate charge
Qg
135
nC
V
DD
= 480 V
V
GS
= 10 V
I
D
= 20 A
I
F
= 20 A, V
GS
= 0
Gate to source charge
Qgs
20
nC
Gate to drain charge
Qgd
65
nC
Body-drain diode forward
voltage
V
DF
0.9
1.4
V
Body-drain diode reverse
recovery time
trr
590
ns
I
F
= 20 A, V
GS
= 0
diF/dt = 100 A/
μ
s
Body-drain diode reverse
recovery charge
Qrr
6.5
μ
C
Note:
4. Pulse test
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