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參數(shù)資料
| 型號(hào)： | H5N6001P |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 468K |
| 代理商： | H5N6001P |
H5N6001P
Rev.0, May 2001, page 6 of 10
0.1
0.3
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20
50
10
0
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10000
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0
20
16
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8
4
40
Gate Charge Qg (nC)
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
20
50
10
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 20 A
V
DS
V
GS
di / dt = 100 A /
μ
s
V = 0, Ta = 25
°
C
V = 100 V
300 V
480 V
V = 480 V
300 V
100 V
r
r
d(on)
t
d(off)
t
tf
V = 10 V, V = 300 V
PW = 5
μ
s, duty
≤
1%
R = 10
Body-Drain Diode Reverce
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
R
C
Reverse Drain Current I (A)
Drain to Source Voltage V (V)
Dynamic Input Characteristics
Switching Characteristics
D
D
G
G
S
Drain Current I (A)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N6001P_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N6001P-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5P | 制造商:BOTHHAND 制造商全稱:Bothhand USA, LP. 功能描述:10/100 BASE-T FIVE PORT MAGNETICS |
| H5P BLACK | 制造商:HellermannTyton 功能描述: |
| H5P0301SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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